Handbook of Semiconductors stands as a definitive, masterfully curated compendium that bridges the foundational physics of solid-state electronics with the revolutionary, next-generation materials shaping the future of global technology. In an era where silicon limitations are pushing the boundaries of Moore’s Law, this extensive work serves as both a timeless reference manual and a forward-looking roadmap for scientists, hardware engineers, and advanced researchers pioneering the next wave of chip fabrication. The handbook begins by anchoring its readers in the absolute bedrock of semiconductor physics. Readers explore deep technical evaluations of electrical conductivity, band structures, and the critical thresholds that dictate how electrons manipulate information. Beyond pure theory, it details the harsh realities of physical manufacturing, giving engineers practical knowledge on how to achieve purity and structural perfection at the atomic level. The book delves deeply into emerging semiconducting materials, providing a crucial analytical look at alternate substrates that promise faster processing speeds and vastly improved thermal efficiencies. It demystifies the complex architecture behind modern microprocessors, tracking the lifecycle of chip manufacturing from raw chemical design to structural integration. Rather than presenting an idealized version of materials science, the text outlines the genuine technological roadblocks, defects, and scaling barriers that must be solved to realize next-generation consumer electronics and quantum computing architectures. Ultimately, this volume acts as a powerful intellectual engine. It empowers the minds that are actively scaling down node sizes, redesigning power grids, and fabricating the very microprocessors that run our modern world.
Henry Collins is a distinguished materials scientist and educator with over two decades of research excellence in solid-state physics and semiconductor engineering. He holds a Ph.D. in Materials Science and Engineering from the Massachusetts Institute of Technology (MIT), where his pioneering work on nanostructured semiconductors earned him international recognition. Dr. Collins currently serves as a Tenured Professor of Electrical Engineering and Director of the Advanced Electronic Materials Laboratory at a leading research university. Before transitioning to academia, he spent ten years as a Principal Semiconductor Physicist at a Fortune 500 microchip manufacturer, bridging the gap between theoretical physics and commercial hardware production. He has authored more than 50 peer-reviewed papers, holds twelve patents in semiconductor manufacturing processes, and regularly consults for global tech firms on next-generation silicon and wide-bandgap materials. In Handbook of Semiconductors, Dr. Collins distills his extensive academic insights and practical industry experience into a definitive, highly accessible guide for students, researchers, and field engineers alike. In the Handbook of Semiconductors, Henry Collins synthesizes his vast repository of knowledge into a definitive, single-source reference. Recognizing the rapid evolution of wide-bandgap materials, quantum dots, and 2D atomic crystals, Collins provides readers with a comprehensive guide that spans fundamental physics, device fabrication, and cutting-edge application architectures. His clear, mathematically rigorous, yet highly accessible writing style transforms complex device physics into actionable engineering insights, making this handbook an indispensable cornerstone for students, researchers, and industry professionals alike.
| Preface Chapter 1. Introduction to Semiconductor Physics Semiconductors Form the Foundation of Modern Electronics PN Junctions Form at Material Interfaces Forward Bias Reduces the Potential Barrier Reverse Bias Expands the Depletion Region Carrier Recombination Restores Equilibrium Conditions Semiconductor Fabrication Involves Precise Processing Semiconductor Characterization Reveals Material Properties Defects Influence Semiconductor Performance Significantly Thermal Properties Determine Power Handling Capacity Amorphous and Polycrystalline Materials Extend Applications Semiconductor Physics Underlies Modern Technology Chapter 2. Crystal Structure and Lattice Dynamics Crystal Structure Defines Semiconductor Material Properties Symmetry Operations Describe Crystal Invariance Acoustic Phonons Transport Sound and Heat Anharmonicity Causes Thermal Expansion and Phonon Interactions Hot Electrons Relax through Phonon Emission Lattice Dynamics Determine Thermal Management Requirements Phonons Enable Indirect Band Gap Transitions Chapter 3. Electronic Band Structure Fundamental Concepts of Electronic Band Structure Direct and Indirect Band Gap Semiconductors Effective Mass and Carrier Dynamics Density of States in Semiconductor Bands III-V Compound Semiconductors Band Properties Chapter 4. Effective Mass Approximation Periodic Potential and Bloch’s Theorem Derivation of Effective Mass from Band Structure Temperature and Pressure Dependence of Effective Mass Effective Mass and Carrier Mobility Measurement Techniques for Effective Mass Temperature Dependence and Electron-Phonon Coupling Effective Mass in Wide Band Gap Semiconductors Effective Mass in Amorphous Semiconductors Effective Mass and Hot Carrier Effects Effective Mass and Thermoelectric Properties Effective Mass in Magnetic Fields and Landau Levels Chapter 5. Intrinsic and Extrinsic Semiconductors Intrinsic Semiconductors and Pure Crystal Structure Electrical Conductivity in Pure Semiconductors Donor and Acceptor Impurity States Majority and Minority Carriers Carrier Mobility and Scattering Mechanisms Generation and Recombination Processes Continuity Equations and Device Modeling Heterojunctions and Band Engineering Quantum Confinement Effects Carrier Transport in High Electric Fields Carrier Lifetime and Diffusion Length High-Frequency Behavior and Transit Time Chapter 6. Carrier Statistics and Fermi Level Fundamental Concepts of Energy Bands in Solids Compensation and its Influence on Carrier Statistics Degenerate Semiconductors and Fermi-Dirac Statistics Carrier Statistics in Heterojunctions and Band Engineering Carrier Statistics in Narrow Band Gap Semiconductors Wide Band Gap Semiconductors and High-Temperature Operation Heavy Doping Effects on Band Structure and Statistics Carrier Statistics in Organic Semiconductors Measurement Techniques for Determining Fermi Level Fermi Level Pinning at Surfaces and Interfaces Minority Carrier Injection and Recombination Statistics Carrier Statistics Under Magnetic Field Quantization Carrier Statistics in Light-Emitting Devices Carrier Statistics in Superlattices and Miniband Transport Chapter 7. Carrier Transport Phenomena Drift Movement Results from Applied Electric Fields in Materials Mobility Determines how Quickly Carriers Respond to Fields Diffusion Transport Arises from Carrier Concentration Gradients High-Field Effects Modify Transport beyond Simple Linear Models Thermoelectric Effects Couple Heat and Charge Transport Magnetotransport Reveals Band Structure Information through Field Effects Minority Carrier Transport Governs Bipolar Device Operation Noise in Transport Reflects Fundamental Fluctuation Processes Photoexcitation Creates Nonequilibrium Carriers with Unique Transport Strain Engineering Modifies Transport through Band Structure Changes Transport Simulation Ranges from Atomistic to Continuum Levels Hot Electron Effects Limit Reliability in Scaled Devices Strained Silicon Technology Enhances Transport through Band Engineering Transport Anisotropy in Layered Materials Enables Novel Device Concepts Transport in Topological Insulators Features Protected Surface States Radiation Effects Modify Transport through Displacement Damage Transport in Amorphous Oxides Enables Transparent Electronics Transport in Semiconductor Superlattices Creates Miniband Conduction Transport in Diamond and Ultra-Wide Band Gap Materials |
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